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- W2479780170 abstract "Polycrystalline SiGe (Poly-SiGe) thin films are of interest for the fabrication of thin film transistors in optoelectronic devices. The crystallization of a-Si 0.8 Ge 0.2 thin films induced by Ni was investigated by in-situ transmission electron microscopy. For the Ni-induced crystallization, NiSi i precipitates were first formed then migrated along a straight line in a-Si 0.8 Ge 0.2 . The crystallization of a-Si 0.8 Ge 0.2 was induced along the path. The reversal of the growth direction of the needle-like crystallites was also observed. It appeared that the NiSi 2 precipitates migrated along the interface of the crystallized and amorphous regions. The results are different from the branching needle-like structure for Ni-induced crystallization of a-Si." @default.
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- W2479780170 date "2005-12-01" @default.
- W2479780170 modified "2023-09-23" @default.
- W2479780170 title "In-situ observation of meta-induced crystallization of amorphous Si 0.8Ge0.2 thin films" @default.
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