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• W2482061373 abstract "The smooth surface of an N-polar GaN/Al x Ga 1−x N/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8° toward the a-plane. The 2DEG of an N-polar GaN/Al x Ga 1−x N/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 × 1013 cm−2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT." @default.
• W2482061373 created "2016-08-23" @default.
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• W2482061373 date "2016-06-01" @default.
• W2482061373 modified "2023-09-26" @default.
• W2482061373 title "MOVPE growth of N-polar GaN/Al<inf>x</inf>Ga<inf>1−x</inf>N/GaN heterostructure on small off-cut substrate for flat interface" @default.
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• W2482061373 doi "https://doi.org/10.1109/iciprm.2016.7528837" @default.
• W2482061373 hasPublicationYear "2016" @default.
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