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- W2482182870 abstract "A new semi-insulation structure in which one isolated island is connected to the substrate was proposed. Based on this semi-insulation structure, an advanced BCD technology which can integrate a vertical device without extra internal interconnection structure was presented. The manufacturing of the new semi-insulation structure employed multi-epitaxy and selectively multi-doping. Isolated islands are insulated with the substrate by reverse-biased PN junctions. Adjacent isolated islands are insulated by isolation wall or deep dielectric trenches. The proposed semi-insulation structure and devices fixed in it were simulated through two-dimensional numerical computer simulators. Based on the new BCD technology, a smart power integrated circuit was designed and fabricated. The simulated and tested results of Vertical DMOS, MOSFETs, BJTs, resistors and diodes indicated that the proposed semi-insulation structure is reasonable and the advanced BCD technology is validated." @default.
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- W2482182870 date "2016-07-01" @default.
- W2482182870 modified "2023-10-14" @default.
- W2482182870 title "Advanced BCD technology with vertical DMOS based on a semi-insulation structure" @default.
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- W2482182870 doi "https://doi.org/10.1088/1674-4926/37/7/074004" @default.
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