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- W2482854361 abstract "In this review the various modes of SIMS and examples of their applications are discussed. SIMS depth profiles are widely used to study dopant profiles and intermetallic diffusion. The extreme surface sensitivity and low concentration detection limits of SIMS make it useful for investigation of substrate and metallization cleaning processes. SIMS elemental imaging is also used in contamination studies. The ability of SIMS to provide isotopic information has allowed elegant mechanistic studies. The identification and determination of the relative abundance of various molecular or elemental species by SIMS is applicable to the development, characterization, and understanding of microelectronic processing. The capability of SIMS in the area of quantitative analyses is also discussed." @default.
- W2482854361 created "2016-08-23" @default.
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- W2482854361 date "1986-01-28" @default.
- W2482854361 modified "2023-09-25" @default.
- W2482854361 title "Applications of Secondary Ion Mass Spectroscopy to Characterization of Microelectronic Materials" @default.
- W2482854361 doi "https://doi.org/10.1021/bk-1986-0295.ch006" @default.
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