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- W2487291227 endingPage "2808" @default.
- W2487291227 startingPage "2799" @default.
- W2487291227 abstract "An overview is given on the status of n‐type dopant activation and diffusion in Ge, based on a standard ion implantation and annealing scheme. Emphasis is on defect engineering approaches to optimize either or both parameters. A detailed discussion is given on the use of co‐implantation by neutral or other n‐type dopants. As a case study, the impact of the C ion implantation energy and dose on n‐type junctions in p‐Ge by P + C co‐implantation will be given. It is demonstrated that for fixed P implant conditions, there exist an optimum energy and dose for achieving a minimum junction depth by the formation of C–PV complexes. An alternative approach is the use of self‐interstitial management at the end‐of‐range of the P implantation. Finally, an overview is given of alternatives for obtaining shallow, highly activated n‐type junctions in Ge. They rely on: non‐standard implantation schemes, ultra‐short annealing methods or relying on in situ doped epitaxial deposition." @default.
- W2487291227 created "2016-08-23" @default.
- W2487291227 creator A5002320770 @default.
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- W2487291227 creator A5046242688 @default.
- W2487291227 creator A5073770524 @default.
- W2487291227 creator A5085012323 @default.
- W2487291227 date "2016-07-18" @default.
- W2487291227 modified "2023-10-06" @default.
- W2487291227 title "Defect engineering for shallow n-type junctions in germanium: Facts and fiction" @default.
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