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- W2487507657 abstract "This paper reports on high performance AlGaN/GaN MISHEMTs with an in-situ SiN gate dielectric. Resulting from the high-quality gate dielectric and dielectric/barrier interface, the MISHEMTs with a gate-drain distance of 15 µm exhibit a high maximum drain current density of 1050 mA/mm, a steep subthreshold slope of 72 mV/dec, and a low gate-drain leakage of 0.6 µA/mm at V GD of −900 V. The high breakdown voltage of 1200 V at I D of 10 µA/mm, and low specific DC on-resistance of 1.7 mΩ·cm2, yield a high power figure of merit (FOM = V BR 2/R on,sp ) of 847 MW/cm 2 for the fabricated devices. Moreover, a small dynamic/DC on-resistance ratio of 1.03 is achieved in the MISHEMTs using the in-situ SiN/PECVD SiN bilayer passivation scheme." @default.
- W2487507657 created "2016-08-23" @default.
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- W2487507657 date "2016-06-01" @default.
- W2487507657 modified "2023-10-01" @default.
- W2487507657 title "High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric" @default.
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- W2487507657 doi "https://doi.org/10.1109/iciprm.2016.7528765" @default.
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