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• W2487962553 abstract "Ohmic contacts fabricated by regrowth of n+ GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends." @default.
• W2487962553 created "2016-08-23" @default.
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• W2487962553 date "2016-07-25" @default.
• W2487962553 modified "2023-09-25" @default.
• W2487962553 title "Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors" @default.
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• W2487962553 doi "https://doi.org/10.1063/1.4959831" @default.
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