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• W2488653695 abstract "GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm−2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 106 cm−2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%." @default.
• W2488653695 created "2016-08-23" @default.
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• W2488653695 date "2016-07-18" @default.
• W2488653695 modified "2023-10-16" @default.
• W2488653695 title "GaAsP solar cells on GaP/Si with low threading dislocation density" @default.
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• W2488653695 doi "https://doi.org/10.1063/1.4959825" @default.
• W2488653695 hasPublicationYear "2016" @default.
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