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• W2489568105 abstract "Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%–3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350 °C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si+-implanted devices and achieve higher responsivity after annealing up to 350 °C." @default.
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• W2489568105 date "2016-07-27" @default.
• W2489568105 modified "2023-10-18" @default.
• W2489568105 title "Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection" @default.
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• W2489568105 doi "https://doi.org/10.3390/photonics3030046" @default.
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