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• W2490162334 startingPage "22151" @default.
• W2490162334 abstract "We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance." @default.
• W2490162334 created "2016-08-23" @default.
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• W2490162334 date "2016-08-18" @default.
• W2490162334 modified "2023-10-18" @default.
• W2490162334 title "Behavior of Photocarriers in the Light-Induced Metastable State in the <i>p</i>-<i>n</i> Heterojunction of a Cu(In,Ga)Se₂ Solar Cell with CBD-ZnS Buffer Layer" @default.
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• W2490162334 doi "https://doi.org/10.1021/acsami.6b05005" @default.
• W2490162334 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/27494649" @default.
• W2490162334 hasPublicationYear "2016" @default.
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