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• W2491092754 abstract "Using as target a CpTi disk in an atmosphere of argon/oxygen and by rf plasma. First titanium dioxide (TiO 2 ) films were obtained on silicon substrates, and subsequently, these films were doped with nitrogen (N-TiO 2 ). In both processes, along four hours at 390°C of temperature. X-Ray diffraction and Raman spectroscopy confirmed the presence of the nanostructured anatase phase. X-ray photoelectron spectroscopy analyzes indicate that the nitrogen atoms were incorporated into the TiO 2 film with ~33.9 at%. The films reach a thickness of 1.25 μm and 40 nm the average uniformity determined by using an atomic force microscope. Finally, UV-Vis diffuse reflectance spectroscopy outcome evaluated ones an energy band gap reduction from 3.17 eV to 2.95 eV corresponding to TiO 2 films and N-TiO 2 films respectively." @default.
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• W2491092754 date "2016-01-01" @default.
• W2491092754 modified "2023-10-18" @default.
• W2491092754 title "Sequential Processes to Produce N-TiO2Films Through Rf Plasmas" @default.
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• W2491092754 doi "https://doi.org/10.1051/matecconf/20166706075" @default.
• W2491092754 hasPublicationYear "2016" @default.
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