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• W2491648433 startingPage "295" @default.
• W2491648433 abstract "Publisher Summary This chapter focuses on advanced germanium metal-oxide-semiconductor device technology including nanoscale gate di-electrics and shallow junctions. The chapter investigates the synthesis and physical properties of germanium oxynitride dielectrics and discusses basic electrical and di-electric-substrate interface characteristics on fabricated germanium oxynitride metal-oxide semiconductor capacitors. The importance of various interface engineering schemes are examined and their resultant effects on the finished capacitors are explored in the chapter. The activation of ion implanted and solid source diffused p-type and n-type dopants in germanium are thoroughly studied, and the related activation dependences are revealed in the chapter as well. The de-activation of pre-activated dopants is observed and a possible mechanism for such a de-activation process is proposed. The chapter concludes by enlisting some recent works on metal germanide contacts." @default.
• W2491648433 created "2016-08-23" @default.
• W2491648433 creator A5065754731 @default.
• W2491648433 creator A5071603212 @default.
• W2491648433 date "2007-01-01" @default.
• W2491648433 modified "2023-10-17" @default.
• W2491648433 title "Nanoscale Germanium MOS Dielectrics and Junctions" @default.
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