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- W2493108755 abstract "The mechanism of the photochemical decomposition of a variety of alkyl polysilanes in solution has been examined. At short wavelengths, silylene extrusion is a major pathway although silyl radicals are also generated. At long wavelengths, the silylene mode is shut down and chain degradation proceeds primarily by bond homolysis. The persistent silyl radicals which are produced at room temperature are not those generated by initial chain cleavage, but result instead from the loss of one alkyl group from the chain. Evidence is presented against a simple photochemical silicon-carbon bond cleavage and in support of a more complex route initiated by a 1,1-reductive chain cleavage to generate initially chain silylene derivatives followed by rearrangement. The results of a DUV lithographic study in a bilayer configuration using poly(cyclohexylmethylsilane) as an imaging and barrier layer are reported. 0.75 μm features were resolved with a commercial 1:1 projection printer utilizing a deep-UV source and compatible optics. Sub 0.5 μm images could be resolved and transferred by O2-RIE using an excimer laser projection printer operating at 248 nm. The resolution using poly(cyclohexylmethylsilane) and excimer laser exposure far exceeds the 0.8 μm limit previously reported for some polysilane copolymers." @default.
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- W2493108755 date "1989-10-31" @default.
- W2493108755 modified "2023-10-06" @default.
- W2493108755 title "Polysilanes: Solution Photochemistry and Deep-UV Lithography" @default.
- W2493108755 doi "https://doi.org/10.1021/bk-1989-0412.ch008" @default.
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