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• W2496642078 abstract "Abstract In this paper, we introduce a bonding method in ambient air using laser irradiation to the face-to-face interface of dissimilar materials. This method is performed while keeping whole wafers of the materials at room temperature. We demonstrate the bonding of LiNbO 3 to Si using pulsed nanosecond green laser irradiation. Laser use can minimize thermal stress owing to a large thermal expansion mismatch. The bonding characteristic obtained by an irradiation laser up to 2.5 J/cm 2 in fluence is investigated. It is found that a LiNbO 3 chip is strongly bonded to a Si chip by setting the laser fluence at the optimum range. A bond strength of over 2 MPa, which may be enough for the device applications, can be obtained." @default.
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• W2496642078 date "2016-07-25" @default.
• W2496642078 modified "2023-10-17" @default.
• W2496642078 title "Bonding of lithium niobate to silicon in ambient air using laser irradiation" @default.
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• W2496642078 doi "https://doi.org/10.7567/jjap.55.08rb09" @default.
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