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• W2497183828 endingPage "752" @default.
• W2497183828 startingPage "685" @default.
• W2497183828 abstract "This work addresses the application of conventional electron spin resonance (ESR) spectrometry, as routinely operated in the 8-35 GHz microwave range, to semiconductor hetero structures (SHs), in particular semiconductor/insulator entities with focused interest on interfaces and thin dielectric (inter) layers. This predominantly entails probing of point defects where, by nature, the ESR method is only directly applicable to the subclass of paramagnetic defects. Of particular interest is the family of intrinsic point defects, inherently or inevitably occurring at interfaces and in interlayers, which play a crucial role in device integrated semiconductor/insulator entities, often in the negative sense through operating as traps detrimentally affecting transport properties. The study implies various aspects: Obviously, a major one concerns characterization, desirably atomic identification, of occurring imperfections for which ESR appears the technique of choice, in fact often eponymous in typifying point defects. But once characterized, to the benefit, the defects offer great potential when exploited as true atomic probes of utmost sensitivity to their atomic environment. Through a selective compilation of representative experimental results, the usefulness of ESR is illustrated in assessing various aspects as diverse as atomic identification of defects, nature of interfaces, local strain, interface stability, structural/chemical evolution of interfaces and interlayers as a function of varying conditions (e.g., thermal treatment, stress), chemical activity of defects and their anneal kinetics. While not a routine method in terms of experimental accessibility, sensitivity, and type of probing, i.e., magnetic rather than electric, ESR will continue to offer great potential in the study of basic SHs, in particular when turned into a multiple resonance spectroscopy through combination with other methods." @default.
• W2497183828 created "2016-08-23" @default.
• W2497183828 creator A5000995013 @default.
• W2497183828 creator A5039212753 @default.
• W2497183828 date "2013-01-01" @default.
• W2497183828 modified "2023-10-12" @default.
• W2497183828 title "Electron Spin Resonance of Interfaces and Nanolayers in Semiconductor Heterostructures" @default.
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