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- W2498460705 abstract "Optical bistability using the large nonlinear index at the band gap of semiconductors has been demonstrated in InSb and GaAs.1,2 We present here bistability in InAs at a wavelength of 3μm, which lies between that of the other reported semiconductors. The 3-μm line of the HF laser was used which closely matches the band gap at 77 K. We also will report on experiments in progress to observe bistability at room temperature with the DF laser." @default.
- W2498460705 created "2016-08-23" @default.
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- W2498460705 date "1984-01-01" @default.
- W2498460705 modified "2023-10-14" @default.
- W2498460705 title "Reflective optical bistability at 3 mW in InAs" @default.
- W2498460705 cites W2010081277 @default.
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- W2498460705 doi "https://doi.org/10.1364/cleo.1984.wo4" @default.
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