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• W2502230661 endingPage "251" @default.
• W2502230661 startingPage "233" @default.
• W2502230661 abstract "Publisher SummarySelf-assembled quantum dots are commonly observed in a wide variety of semiconductor systems ranging from IV-IV (Ge/Si) to II-VI (CdSe/ZnSe) and III-V (InAs/GaAs, InAs/InP, GaN/AlN, GalnN/GaN) materials. For all these various combinations, the deposition of material A (possibly a ternary alloy) in compressive strain on material B leads to the formation of nanometric islands. In a very crude approximation, the 2D/3D transition results from a competition among elastic energy, interface energy, and surface energy leading to the formation of a 3D island when the elastic strain accumulated during coherentdeposition of A over B exceeds a critical value. However, this view is very approximate. First, it neglects the kinetical aspects which may be determinant in the strain relaxation process. Second it does not take into account the detailed mechanisms of 3D island nucleation. This chapter discusses the role of the various parameters governing the controlled growth of self-assembled quantum dots systems through the example of GaN." @default.
• W2502230661 created "2016-08-23" @default.
• W2502230661 creator A5005465652 @default.
• W2502230661 date "2001-01-01" @default.
• W2502230661 modified "2023-09-25" @default.
• W2502230661 title "Self-assembled quantum dots systems" @default.
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• W2502230661 doi "https://doi.org/10.1016/b978-044450747-1/50040-5" @default.
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