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- W2503930897 abstract "Large scale computations are used to simulate the growth of GaAs and AlGaAs thin films by organometallic chemical vapor deposition (MOCVD) in horizontal and vertical reactors. The computations provide new insights into flow, heat and mass transfer effects on film thickness uniformity and interface abruptness in superlattice growth. For the horizontal reactor, the simulations demonstrate the existence of longitudinal buoyancy driven flow rolls that adversely affect film thickness uniformity. For the vertical reactor, the film thickness uniformity is shown to be influenced by susceptor edge, susceptor rotation, reactor wall and buoyancy effects. It is demonstrated that nonlinear interactions between the transport processes lead to the existence of multiple steady flows in certain operating regions. Concentration transients in the growth of AlAs/GaAs interfaces are simulated and it is shown that the presence of flow recirculation cells widens the interface." @default.
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- W2503930897 date "1987-10-22" @default.
- W2503930897 modified "2023-09-25" @default.
- W2503930897 title "Growth of Compound Semiconductors and Superlattices by Organometallic Chemical Vapor Deposition" @default.
- W2503930897 doi "https://doi.org/10.1021/bk-1987-0353.ch019" @default.
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