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- W2507767196 abstract "Physical properties of reduced graphene oxide (rGO) strongly depend on the ratio of sp2 to sp3 hybridized carbon atoms, the presence of different functional groups, and the characteristics of the substrates. This research for the very first time illustrates successful wafer scale integration of 2D rGO with Cu/TiN/Si, employing pulsed laser deposition followed by laser annealing of carbon-doped copper layers using nanosecond excimer lasers. The XRD, SEM, and Raman spectroscopy measurements indicate the presence of large area rGO onto Si having Raman active vibrational modes: D, G, and 2D. A high resolution SEM depicts the morphology and formation of rGO from zone-refined carbon formed after nanosecond laser annealing. Temperature-dependent resistance data of rGO thin films follow the Efros-Shklovskii variable range hopping (VRH) model in the low-temperature region and Arrhenius conduction in the high-temperature regime. The photoluminescence spectra also reveal a less intense and broader blue fluorescence spectra, indicating the presence of miniature sized sp2 domains in the near vicinity of π* electronic states which favor the VRH transport phenomena. This wafer scale integration of rGO with Si employing a laser annealing technique will be useful for multifunctional integrated electronic devices and will open a new frontier for further extensive research in these functionalized 2D materials." @default.
- W2507767196 created "2016-09-16" @default.
- W2507767196 creator A5010567856 @default.
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- W2507767196 date "2016-09-09" @default.
- W2507767196 modified "2023-09-26" @default.
- W2507767196 title "Wafer scale integration of reduced graphene oxide by novel laser processing at room temperature in air" @default.
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- W2507767196 doi "https://doi.org/10.1063/1.4962210" @default.
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