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• W2508053430 abstract "By analyzing the factors which affect the wall-plug efficiency of semiconductor Laser Diodes (LDs), a high efficiency 1060 nm LD was designed, including active region, waveguide layers, and cladding layers. The simulation result shows that the component of In in InGaAs in the active region cannot be too small, otherwise the thickness of InGaAs active layer will exceed the critical thickness, meanwhile the asymmetric large optical cavity can decrease the cavity loss effectively. The epitaxial structure was grown by MOCVD, experimental results of varying cavity length showed that the internal quantum efficiency reached 98.57%, and the cavity loss was only 0.273 cm?1. Devices with 4 mm-cavity-length and 100 μm-strip-width were fabricated, 47.4% wall-plug efficiency was reached under QCW pulse condition at room temperature, and the peak wavelength was 1059.4 nm." @default.
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• W2508053430 date "2016-01-01" @default.
• W2508053430 modified "2023-10-17" @default.
• W2508053430 title "High Wall-Plug Efficiency 1060 nm High Power Semiconductor Laser" @default.
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• W2508053430 doi "https://doi.org/10.4236/opj.2016.68b028" @default.
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