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• W2510123402 abstract "The planar epitaxial growth of semipolar (101¯3) GaN on a Si(001) substrate was performed on a directionally sputtered AlN buffer layer. Three types of interlayers, i.e., single AlN, double AlN, and a stack of AlN/GaN layers were grown by metalorganic chemical vapor deposition (MOCVD) to achieve high quality GaN films. The results for the stack of AlN/GaN layers provide highest crystal quality and optical properties for GaN. Comparing the top (Ga face) and bottom (N face) surfaces of grown semipolar (101¯3) GaN confirms the defect density reduction that is due to the application of interlayers. Moreover, reduced inversion domain density on the bottom surface is attributed with the insertion of interlayers. Improving the quality of semipolar GaN on Si(001) substrates is expected to be useful for GaN/Si(001) integrated optoelectronics." @default.
• W2510123402 created "2016-09-16" @default.
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• W2510123402 date "2016-11-01" @default.
• W2510123402 modified "2023-10-16" @default.
• W2510123402 title "Improved crystal quality of semipolar (10<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML altimg=si0009.gif overflow=scroll><mml:mrow><mml:mover accent=true><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math>3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer" @default.
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• W2510123402 doi "https://doi.org/10.1016/j.jcrysgro.2016.09.004" @default.
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