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- W2510155051 abstract "Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered to provide a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (with respect to scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts[1]." @default.
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- W2510155051 date "2016-06-01" @default.
- W2510155051 modified "2023-10-14" @default.
- W2510155051 title "Energy efficient computing by redox-based memristive oxide elements" @default.
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- W2510155051 doi "https://doi.org/10.1109/snw.2016.7577978" @default.
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