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- W2510187390 abstract "A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/μm in a temperature range from 25 °C to 85 °C. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number." @default.
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- W2510187390 date "2015-09-29" @default.
- W2510187390 modified "2023-10-16" @default.
- W2510187390 title "A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology" @default.
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- W2510187390 doi "https://doi.org/10.1088/1674-1056/24/10/108503" @default.
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