FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2510914858> ?p ?o ?g. }

• W2510914858 abstract "In the broad-spectrum of 3D system integration technologies, stacking of die at wafer level is considered a promising and cost effective platform solution for 3D device and 2.5D interposer assembly. The 3D die-to-wafer (D2W) approach consists of a sequence of processes: D2W stacking, wafer-level die encapsulation (wafer reconstruction) using e.g. wafer-level molding, Wafer thinning, Through Silicon Via (TSV) reveal and backside passivation, and finally the addition of a redistribution layer (RDL) and bumping or wafer level solder ball attach. The area explored in this paper is the 300mm wafer molding after D2W attachment. A major concern with this approach is the typically large wafer warpage after wafer level molding. This makes post-processing of the reconstructed wafers difficult with standard semiconductor equipment. Typical warpage after wafer molding of 775µm thick silicon combined with equal thickness of 775µm moldcap is around 8 mm. This is due to the large mismatch in coefficient of thermal expansion (CTE) between the materials. As a result of this large warpage, bonding the reconstructed wafer to a special carrier substrate is required to further process the wafers. This requires additional bonding and debonding equipment as well as several additional processing steps with low added value. In this paper, we will describe two different options to reduce the wafer warpage post molding. The first option is the transfer molding with exposed die. Exposed die molding reduces the amount of mold material as there is no mold compound on top of the die. It will be shown this can effectively reduce the substrate warpage to less than 1.5mm for 300mm diameter wafers. The exposed die configuration can also be used in high power application since heat sinks can be directly attached to the die backside. The second option is the transfer molding of the D2W stack together with an additional balancing wafer. The mold material is injected in a cavity formed by the stacking of the D2W and the balancing wafer. After molding, the resulting wafer warpage of the composite D2W/W stack is well below 200µm, compatible with semiconductor process equipment. Also important to note is the temperature independence of the warpage of this balanced stack construction. As in this approach, we can realize a direct contact between the stacked die and the balancing wafer, the balancing wafer will also act as a package-sized heat spreader. In this paper, the feasibility of Wafer Level Packaging using the transfer molding method of D2W assemblies will be demonstrated for thin mold cap, exposed die and balancing wafer approaches. The obtained experimental results are used to validate a theoretical model for predicting wafer warpage post wafer molding." @default.
• W2510914858 created "2016-09-16" @default.
• W2510914858 creator A5018617418 @default.
• W2510914858 creator A5019685555 @default.
• W2510914858 creator A5034631000 @default.
• W2510914858 creator A5040596931 @default.
• W2510914858 creator A5050680149 @default.
• W2510914858 creator A5051712390 @default.
• W2510914858 creator A5061474841 @default.
• W2510914858 creator A5063785314 @default.
• W2510914858 creator A5064291276 @default.
• W2510914858 creator A5075599987 @default.
• W2510914858 creator A5075762356 @default.
• W2510914858 creator A5080159178 @default.
• W2510914858 date "2016-05-01" @default.
• W2510914858 modified "2023-10-01" @default.
• W2510914858 title "Low Warpage Wafer Level Transfer Molding Post 3D Die to Wafer Assembly" @default.
• W2510914858 cites W2032281090 @default.
• W2510914858 cites W2130156466 @default.
• W2510914858 cites W2555767841 @default.
• W2510914858 doi "https://doi.org/10.1109/ectc.2016.194" @default.
• W2510914858 hasPublicationYear "2016" @default.
• W2510914858 type Work @default.
• W2510914858 sameAs 2510914858 @default.
• W2510914858 citedByCount "2" @default.
• W2510914858 countsByYear W25109148582020 @default.
• W2510914858 countsByYear W25109148582023 @default.
• W2510914858 crossrefType "proceedings-article" @default.
• W2510914858 hasAuthorship W2510914858A5018617418 @default.
• W2510914858 hasAuthorship W2510914858A5019685555 @default.
• W2510914858 hasAuthorship W2510914858A5034631000 @default.
• W2510914858 hasAuthorship W2510914858A5040596931 @default.
• W2510914858 hasAuthorship W2510914858A5050680149 @default.
• W2510914858 hasAuthorship W2510914858A5051712390 @default.
• W2510914858 hasAuthorship W2510914858A5061474841 @default.
• W2510914858 hasAuthorship W2510914858A5063785314 @default.
• W2510914858 hasAuthorship W2510914858A5064291276 @default.
• W2510914858 hasAuthorship W2510914858A5075599987 @default.
• W2510914858 hasAuthorship W2510914858A5075762356 @default.
• W2510914858 hasAuthorship W2510914858A5080159178 @default.
• W2510914858 hasConcept C111106434 @default.
• W2510914858 hasConcept C126355924 @default.
• W2510914858 hasConcept C127413603 @default.
• W2510914858 hasConcept C159985019 @default.
• W2510914858 hasConcept C160671074 @default.
• W2510914858 hasConcept C165013422 @default.
• W2510914858 hasConcept C171250308 @default.
• W2510914858 hasConcept C192562407 @default.
• W2510914858 hasConcept C199639397 @default.
• W2510914858 hasConcept C2776512755 @default.
• W2510914858 hasConcept C2779133538 @default.
• W2510914858 hasConcept C2780288131 @default.
• W2510914858 hasConcept C2780566776 @default.
• W2510914858 hasConcept C37696544 @default.
• W2510914858 hasConcept C44445679 @default.
• W2510914858 hasConcept C49040817 @default.
• W2510914858 hasConcept C67558686 @default.
• W2510914858 hasConcept C78519656 @default.
• W2510914858 hasConcept C8002213 @default.
• W2510914858 hasConceptScore W2510914858C111106434 @default.
• W2510914858 hasConceptScore W2510914858C126355924 @default.
• W2510914858 hasConceptScore W2510914858C127413603 @default.
• W2510914858 hasConceptScore W2510914858C159985019 @default.
• W2510914858 hasConceptScore W2510914858C160671074 @default.
• W2510914858 hasConceptScore W2510914858C165013422 @default.
• W2510914858 hasConceptScore W2510914858C171250308 @default.
• W2510914858 hasConceptScore W2510914858C192562407 @default.
• W2510914858 hasConceptScore W2510914858C199639397 @default.
• W2510914858 hasConceptScore W2510914858C2776512755 @default.
• W2510914858 hasConceptScore W2510914858C2779133538 @default.
• W2510914858 hasConceptScore W2510914858C2780288131 @default.
• W2510914858 hasConceptScore W2510914858C2780566776 @default.
• W2510914858 hasConceptScore W2510914858C37696544 @default.
• W2510914858 hasConceptScore W2510914858C44445679 @default.
• W2510914858 hasConceptScore W2510914858C49040817 @default.
• W2510914858 hasConceptScore W2510914858C67558686 @default.
• W2510914858 hasConceptScore W2510914858C78519656 @default.
• W2510914858 hasConceptScore W2510914858C8002213 @default.
• W2510914858 hasLocation W25109148581 @default.
• W2510914858 hasOpenAccess W2510914858 @default.
• W2510914858 hasPrimaryLocation W25109148581 @default.
• W2510914858 hasRelatedWork W1721175952 @default.
• W2510914858 hasRelatedWork W2034049402 @default.
• W2510914858 hasRelatedWork W2075893297 @default.
• W2510914858 hasRelatedWork W2094236328 @default.
• W2510914858 hasRelatedWork W2130236538 @default.
• W2510914858 hasRelatedWork W2134346907 @default.
• W2510914858 hasRelatedWork W2169300790 @default.
• W2510914858 hasRelatedWork W2510914858 @default.
• W2510914858 hasRelatedWork W2538127114 @default.
• W2510914858 hasRelatedWork W2540312267 @default.
• W2510914858 isParatext "false" @default.
• W2510914858 isRetracted "false" @default.
• W2510914858 magId "2510914858" @default.
• W2510914858 workType "article" @default.