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• W2511133764 abstract "The resistance versus temperature across the metal-insulator transition (MIT) of ${mathrm{V}}_{2}{mathrm{O}}_{3}$ nanodevices exhibits multiple discontinuous jumps. The jump sizes range over three orders of magnitude in resistance and their distribution follows a power law, implying that the MIT of ${mathrm{V}}_{2}{mathrm{O}}_{3}$ occurs through avalanches. While the maximum jump size depends on the device size, the power law exponent for ${mathrm{V}}_{2}{mathrm{O}}_{3}$ is independent of device geometry and different than the one found earlier in $mathrm{V}{mathrm{O}}_{2}$. A two-dimensional random percolation model exhibits a power law distribution different from the one found in ${mathrm{V}}_{2}{mathrm{O}}_{3}$. Instead, the model gives a similar exponent found in another vanadium oxide, $mathrm{V}{mathrm{O}}_{2}$. Our results suggest that the MITs of $mathrm{V}{mathrm{O}}_{2}$ and ${mathrm{V}}_{2}{mathrm{O}}_{3}$ are produced by different mechanisms." @default.
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• W2511133764 date "2015-08-28" @default.
• W2511133764 modified "2023-10-02" @default.
• W2511133764 title "Avalanches in vanadium sesquioxide nanodevices" @default.
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• W2511133764 doi "https://doi.org/10.1103/physrevb.92.085150" @default.
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