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• W2513320038 abstract "The silicide phase formation is examined in the Ni/Si system. The multiphase of NiSi and NiSi2 is confirmed in a specimen, in which a 30-mm-thick Ni film is sputter-deposited on Si(100) at 350 °C and subsequently annealed at 400 °C for 1 h. This is interpreted that the NiSi and NiSi2 phases nucleate from the amorphous alloys, as a super-cooled melt, at a composition corresponding to those of eutectic points in different composition, which appear in the intermixed Ni–Si alloy layer with a Ni concentration gradient owing to intermixing between Ni and Si at the interface. To confirm this idea, we performed Ni deposition on a 350 °C-heated Si substrate with a thin SiO2 layer. The results show the direct formation of NiSi2 in a nonuniform fashion. This is because the thin SiO2 layer suppresses Ni diffusion into Si, resulting in the formation of a Ni–Si alloy with a Si-rich composition, from which NiSi2 nucleates at a low temperature. We can demonstrate that the high-temperature phase of NiSi2 nucleates under kinetic constraints from an amorphous alloy with a suitable composition." @default.
• W2513320038 created "2016-09-16" @default.
• W2513320038 creator A5066509950 @default.
• W2513320038 creator A5069831005 @default.
• W2513320038 date "2016-08-12" @default.
• W2513320038 modified "2023-09-26" @default.
• W2513320038 title "Low-Temperature Formation of NiSi₂Phase in Ni/Si System" @default.
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• W2513320038 doi "https://doi.org/10.1002/ecj.11860" @default.
• W2513320038 hasPublicationYear "2016" @default.
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