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- W2513422436 abstract "Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P12=(5.3±0.4)×10-11 Pa-1,P11=(−2.6±0.6)×10-11 Pa-1, and P44=(11.42±0.6)×10-11 Pa-1. Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity." @default.
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- W2513422436 date "2016-08-29" @default.
- W2513422436 modified "2023-09-26" @default.
- W2513422436 title "Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation" @default.
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- W2513422436 doi "https://doi.org/10.1063/1.4962048" @default.
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