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- W2515166019 abstract "Semiconductors can be excited by exposure to radiation of a higher energy than the band gap and an energy-rich electron–hole pair is formed. This energy can be utilized electrically, to change the catalyst surface itself, or chemically. For photoelectrochemical (PEC) water-splitting, a light-sensitive semiconductor is commonly used as a photoelectrode. In PEC applications, titanium dioxide (TiO2) is one of the most important and most widely used semiconductors, mainly due to its chemical stability, non-toxicity, low cost and adequate band gap for effective water-splitting. The production of TiO2 thin films is a feasible way to immobilize the catalyst in a photoelectrode surface. The photoactivity of the resulting TiO2 film depends strongly on its physical properties such as crystal phase structures, thickness, porosity and atomic defects. In the present work, these properties were studied for TiO2 thin films obtained by a dip-coating process of a sol-gel system in a glass-FTO substrate. Two systems were tested; one with a binder (polyvinyl butyral – PVB) and another without it. The samples after heat treatment were characterized by XRD, SEM, DRS, ellipsometry, profilometry and photocurrent measurements. A significant correlation between the structural aspects of the films (roughness, thickness and optical properties) and the generated photocurrent was established." @default.
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- W2515166019 date "2016-05-31" @default.
- W2515166019 modified "2023-10-14" @default.
- W2515166019 title "Effect of Structural Properties on the Photoelectrochemical Performance of TiO<sub>2</sub> Films" @default.
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- W2515166019 doi "https://doi.org/10.1002/9781119234463.ch1" @default.
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