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- W2516758320 abstract "A novel and efficient fabrication process based on sidewall oxidation of patterned silicon substrate is proposed and experimentally demonstrated for SiNx/SiO2 waveguides on silicon substrate. The fabrication time of a 5.5 μm-thick lower SiO2 cladding formed by the proposed sidewall oxidation method is only 1/3 of that required by conventional flat surface oxidation process. Thermal annealing process is carried out to reduce the propagation loss of the waveguide due to material absorption in the SiNx core and the SiO2 upper cladding formed by plasma enhanced chemical vapour deposition. Furthermore, it is confirmed that waveguides fabricated by sidewall oxidation exhibit similar propagation loss as those obtained with conventional surface oxidation process." @default.
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- W2516758320 date "2016-08-31" @default.
- W2516758320 modified "2023-09-27" @default.
- W2516758320 title "A simple fabrication process for SiNx/SiO2 waveguide based on sidewall oxidation of patterned silicon substrate" @default.
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- W2516758320 doi "https://doi.org/10.1080/09500340.2016.1226440" @default.
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