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• W2517103690 abstract "Conductive bridging RAM (CBRAM) is a resistive memory technology (RRAM) offering performance, power/energy, reliability, and cost advantages over incumbent nonvolatile memory technologies. The present article introduces the class of CBRAM in high-volume manufacturing today—subquantum CBRAM—and highlights similarities and differences between it and its predecessors. The materials requirements of subquantum CBRAM cells are described, and new insight into the switching mechanism is provided. Finally, its electrical characteristics are benchmarked, and its suitability for applications such as embedded memory, the Internet of Things (IoT), and radiation-tolerant electronics is summarized." @default.
• W2517103690 created "2016-09-16" @default.
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• W2517103690 date "2016-08-19" @default.
• W2517103690 modified "2023-09-27" @default.
• W2517103690 title "(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow" @default.
• W2517103690 doi "https://doi.org/10.1149/07505.0041ecst" @default.
• W2517103690 hasPublicationYear "2016" @default.
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