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• W2517448051 abstract "A high photo-induced effective minority carrier lifetime τ eff of crystalline silicon was achieved by simple heat treatment in liquid water. τ eff was 2.8×10−3 s for 15-Ωcm n-type crystalline silicon heat treated in liquid water at 120°C for 1.5 h. The τ eff for the sample treated at 90°C increased from 1.0×10−4 s (just after the treatment) to 1.7×10−3 s by keeping the sample in the air atmosphere for 700 h. τ eff maintained high values up to 1800 h. The metal-insulator-semiconductor type diodes were formed by forming Al and Au metals on the 0.7-nm-thick passivated layers. Rectified current characteristics were observed in the dark field because of the difference of the work function between Al and Au. Capacitance response with the bias voltage suggested low density of interface traps. Short circuit current density of 24.3 mA/cm2 and open circuit voltage of 0.36 V were observed in the MIS-type solar cell under the light illumination of AM 1.5 at 100 mW/cm2 to the rear surface." @default.
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• W2517448051 date "2016-07-01" @default.
• W2517448051 modified "2023-09-25" @default.
• W2517448051 title "Surface passivation of crystalline silicon by heat treatment in liquid water" @default.
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• W2517448051 doi "https://doi.org/10.1109/am-fpd.2016.7543693" @default.
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