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• W2518698092 endingPage "017201" @default.
• W2518698092 startingPage "017201" @default.
• W2518698092 abstract "The temperature-dependent effect of residual charge carrier (n0), at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor (GFET) using 7 nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of 900 cm2/V·s at room temperature and it decreases to 45 cm2 /V·s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature." @default.
• W2518698092 created "2016-09-23" @default.
• W2518698092 creator A5035030048 @default.
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• W2518698092 date "2016-01-01" @default.
• W2518698092 modified "2023-10-16" @default.
• W2518698092 title "Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor" @default.
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• W2518698092 doi "https://doi.org/10.1088/0256-307x/33/1/017201" @default.
• W2518698092 hasPublicationYear "2016" @default.
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