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• W2518821490 abstract "We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with ±5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors." @default.
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• W2518821490 date "2016-09-15" @default.
• W2518821490 modified "2023-09-23" @default.
• W2518821490 title "Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications" @default.
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• W2518821490 doi "https://doi.org/10.1117/12.2235523" @default.
• W2518821490 hasPublicationYear "2016" @default.
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