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• W2519408680 endingPage "354" @default.
• W2519408680 startingPage "351" @default.
• W2519408680 abstract "We have examined the formation of the undoped polycrystalline Si1-x-yGexSny (poly- Si1-x-yGexSny) layers grown on SiO2 by using the solid phase crystallization method. We have investigated the electrical property of poly-Si1-x-yGexSny layers with the Hall effect measurement. We clarified the effects of the Sn incorporation into Si1-xGex and the two-step solid phase crystallization on the Hall mobility. We found that the Si1-x-yGexSny layers are crystallized over 475 ºC-annealing. No Sn precipitation is observed after the crystallization of the Si1-x-yGexSny layer with a Sn content of 1.3%. We can see that a large grain size can be achieved with the lower annealing temperature for Si1-x-yGexSny with a lower content of Sn. On the other hand, a higher mobility is obtained with the higher annealing temperature for the sample at a Sn content of 1.3%. We performed the additional 2nd-step annealing at 700ºC for 10 min, and the mobility was effectively improved to be 1.5 times higher (129 cm2/V-s) than that before the 2nd-step annealing." @default.
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• W2519408680 date "2015-01-01" @default.
• W2519408680 modified "2023-09-25" @default.
• W2519408680 title "Mobility Behavior of Polycrystalline Si_{1-<i>x</i>-<i>y</i>}Ge_<i>x</i>Sn_<i>y</i> Grown on Insulators" @default.
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• W2519408680 doi "https://doi.org/10.14723/tmrsj.40.351" @default.
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