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• W2520340049 endingPage "074006" @default.
• W2520340049 startingPage "074006" @default.
• W2520340049 abstract "An optimized modeling method of 8 × 100 μm AlGaN/GaN-based high electron mobility transistor (HEMT) for accurate continuous wave (CW) and pulsed power simulations is proposed. Since the self-heating effect can occur during the continuous operation, the power gain from the continuous operation significantly decreases when compared to a pulsed power operation. This paper extracts power performances of different device models from different quiescent biases of pulsed current–voltage (I–V) measurements and compared them in order to determine the most suitable device model for CW and pulse RF microwave power amplifier design. The simulated output power and gain results of the models at Vgs = −3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented." @default.
• W2520340049 created "2016-09-23" @default.
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• W2520340049 date "2015-07-01" @default.
• W2520340049 modified "2023-10-06" @default.
• W2520340049 title "Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications" @default.
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• W2520340049 doi "https://doi.org/10.1088/1674-4926/36/7/074006" @default.
• W2520340049 hasPublicationYear "2015" @default.
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