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- W2521101364 abstract "The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct-bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power-and temperature-dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct-bandgap GeSn-based devices as a light source for on-chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature-dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high-quality GeSn alloys with very high Sn content." @default.
- W2521101364 created "2016-09-30" @default.
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- W2521101364 date "2016-09-19" @default.
- W2521101364 modified "2023-09-25" @default.
- W2521101364 title "High Sn-Content GeSn Light Emitters for Silicon Photonics" @default.
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- W2521101364 doi "https://doi.org/10.1002/9781119069225.ch2-6" @default.
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