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• W2521738212 abstract "UV photo detectors by Using Two Steps Hydrothermal Growth of ZnO Nanowires T. M. Chen, K. M. Uang, H. X. Chen, C. W. Lin, F. S. Tsai, P. H. Wang, P. R. Wang, D. M. Kou, W. C. Lee, and S. J. Wang Department of Electrical Engineering, Wu-Feng Institute of Technology, Chiayi, Taiwan, R.O.C. Graduate School of Opto-Mechtronic and Materials, Wu-Feng Institute of Technology, Chiayi, Taiwan, R.O.C. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. Zinc Oxide (ZnO) with a wide direct bandgap (3.4 eV) and a large excitation biding energy (60 meV) is a promising n-type semiconductor material for applications of light emitting diodes, sensors, and solar cells. Because ZnO nanowires (ZnO-NWs) can be prepared by low temperature procedures, it can be employed in flexible electronics such as wearable displays, detectors, and sensors. This study proposes the use of a ZnO-NW-based nano heterojunction (NHJ) structure for applications of flexible UV photo detectors. NHJs were formed via two steps hydrothermal growth (HTG) of ZnO-NWs onto Polyethylene terephthalate (PET) p-type nickel oxide (pNiO) deposited flexible substrate. Figure 1 illustrates the key fabrication processes flow of the proposed device. Step (a) was thermosetting process which PET specimens were placed in 85°C hot water 30 minutes and then placed immediately in 15°C cold water 10 minutes to enhance the toughness and flatness of PET. Step (b) was p-NiO deposited process which a 100 nm thick p-NiO film was sputtered on the PET substrates by e-beam deposition. Step (c) was the first step HTG process which Samples were placed in a mix solution of 0.06 M Zinc nitrate hexahydrate (Zn(NO3)2 6H2O) and 0.08M Hexamethylenetetramine (HMT) at 85°C 30 minutes. It is found that only tiny loose ZnO nanospots (ZnO-NSPs) grew onto the p-NiO film. Samples were then washed in DI water and then baked on 90°C hot plate to solidify ZnO-NSPs. Step (d) was the second step of HTG process which samples with ZnONSPs were placed in another mix solution of 0.08 M Zinc nitrate hexahydrate and 0.06M HMT. Attributed to ZnONSPs served as seed layer, ZnO-NWs can grow aligned. Step (e) a 200 nm thick AZO film was deposited to serve as a transparent conducting layer for current density uniform distribution. Finally, step (e) 100 nm thick grid Pt electrodes were deposited on the surface of the NHJs through sputter deposition. The device size is 0.6 0.6 cm. The morphology of the two steps grown ZnO-NWs and nZnO-NWs/p-NiO NHJs were examined by scanning electron microscopy (SEM, Hitachi S4700). The current density-voltage (J-V) characteristics via UV illuminations were measured using a Keithley 237 voltage source instrument at room temperature." @default.
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• W2521738212 date "2010-01-01" @default.
• W2521738212 modified "2023-09-24" @default.
• W2521738212 title "Fabrication and Characterization of Flexible Substrate UV Photo Detectors by Using Two Steps Hydrothermal Growth of ZnO Nanowires" @default.
• W2521738212 doi "https://doi.org/10.1149/ma2010-02/2/138" @default.
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