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• W2522798591 startingPage "2761" @default.
• W2522798591 abstract "The plasticity of silicon-doped GaAs was investigated between 25°C and 400°C using microcompression to prevent premature failure by cracking. Micropillars with diameters of ~2.5 μm were fabricated on a $$langle 100rangle $$ -oriented GaAs single crystal by means of both conventional lithographic etching techniques and focused ion beam machining and then compressed in situ in the scanning electron microscope (SEM). A transition in deformation mechanisms from partial dislocations to perfect dislocations was found at around 100°C. At lower temperatures, the residual surface layer from lithographic processing was found to provide sufficient constraint to prevent crack opening, which resulted in a significant increase in ductility over FIB-machined pillars. Measured apparent activation energies were found to be significantly lower than previous bulk measurements, which is mostly attributed to the silicon dopant and to a lesser extent to the size effect." @default.
• W2522798591 created "2016-09-30" @default.
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• W2522798591 date "2016-09-21" @default.
• W2522798591 modified "2023-10-17" @default.
• W2522798591 title "High-Temperature In situ Deformation of GaAs Micro-pillars: Lithography Versus FIB Machining" @default.
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• W2522798591 doi "https://doi.org/10.1007/s11837-016-2106-8" @default.
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