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- W2523750829 abstract "The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III–V based hybrid devices onto the mainstream Si technology platform." @default.
- W2523750829 created "2016-09-30" @default.
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- W2523750829 date "2016-09-28" @default.
- W2523750829 modified "2023-10-17" @default.
- W2523750829 title "Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure" @default.
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- W2523750829 doi "https://doi.org/10.1021/acsami.6b09592" @default.
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