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• W2523858473 endingPage "324" @default.
• W2523858473 startingPage "318" @default.
• W2523858473 abstract "In preparing Cu2ZnSnSe4 (CZTSe) thin films, selenization at high Se pressure is likely to form a thick molybdenum diselenide (MoSe2) layer. An excessively thick MoSe2 layer degrades the performance of CZTSe solar cells. Annealing under low Se pressure has been suggested to prevent the formation of such a thick MoSe2 layer. However, the potential loss of Sn metal from CZTSe thin films at low Se pressure or high temperature raises the additional difficulty of controlling the compositions and phases of the films. Carefully controlling these selenization parameters to yield high-quality CZTSe thin films is important. This study investigates the loss of Sn and the formation of molybdenum diselenide in CZTSe thin films at low Se pressure. Three-step selenization at low Se pressure is performed on an electrodeposited Cu/Sn/Zn precursor to prepare high-quality CZTSe thin films. In the first step, rapid thermal annealing with a substrate temperature of 500 °C and a low Se vapor pressure of 4.6 Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and thus to obtain a Cu-poor and Zn-rich film. In the second step, a high annealing temperature of 570 °C and an inert gas at high pressure was used to improve elemental diffusion and increase the uniformity of the elemental distribution. In the third step, thermal annealing with a substrate temperature of 500 °C and a low Se vapor pressure of 4.6 Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and to eliminate the impurity phase of SnSe (which was formed in the second step of annealing) on the surface of the CZTS films. The loss of Sn and the formation of molybdenum diselenide in the CZTSe thin films are negligible when this three-step selenization at low Se pressure is used. When the selenization parameters are properly controlled, CZTSe solar cells with an efficiency of as high as 8.2% can be obtained." @default.
• W2523858473 created "2016-10-07" @default.
• W2523858473 creator A5001090145 @default.
• W2523858473 creator A5010928331 @default.
• W2523858473 creator A5039750122 @default.
• W2523858473 creator A5054081459 @default.
• W2523858473 creator A5060064406 @default.
• W2523858473 creator A5077044332 @default.
• W2523858473 creator A5082898906 @default.
• W2523858473 creator A5087108685 @default.
• W2523858473 creator A5087670483 @default.
• W2523858473 creator A5089426898 @default.
• W2523858473 date "2017-01-01" @default.
• W2523858473 modified "2023-10-18" @default.
• W2523858473 title "A CZTSe solar cell with 8.2% power conversion efficiency fabricated using electrodeposited Cu/Sn/Zn precursor and a three-step selenization process at low Se pressure" @default.
• W2523858473 cites W1518784373 @default.
• W2523858473 cites W1590304507 @default.
• W2523858473 cites W1813516108 @default.
• W2523858473 cites W1904791620 @default.
• W2523858473 cites W1979583260 @default.
• W2523858473 cites W1983266117 @default.
• W2523858473 cites W1983285705 @default.
• W2523858473 cites W1987171934 @default.
• W2523858473 cites W1989013848 @default.
• W2523858473 cites W1998341144 @default.
• W2523858473 cites W2039992997 @default.
• W2523858473 cites W2059603615 @default.
• W2523858473 cites W2064657563 @default.
• W2523858473 cites W2075339887 @default.
• W2523858473 cites W2085914112 @default.
• W2523858473 cites W2097391564 @default.
• W2523858473 cites W2107802776 @default.
• W2523858473 cites W2114362463 @default.
• W2523858473 cites W2114964012 @default.
• W2523858473 cites W2118196471 @default.
• W2523858473 cites W2124652162 @default.
• W2523858473 cites W2131488455 @default.
• W2523858473 cites W2136671002 @default.
• W2523858473 cites W2143830645 @default.
• W2523858473 cites W2144683512 @default.
• W2523858473 cites W2145497206 @default.
• W2523858473 cites W2146825023 @default.
• W2523858473 cites W2169519428 @default.
• W2523858473 cites W2319854688 @default.
• W2523858473 cites W2327045482 @default.
• W2523858473 doi "https://doi.org/10.1016/j.solmat.2016.09.028" @default.
• W2523858473 hasPublicationYear "2017" @default.
• W2523858473 type Work @default.
• W2523858473 sameAs 2523858473 @default.
• W2523858473 citedByCount "41" @default.
• W2523858473 countsByYear W25238584732017 @default.
• W2523858473 countsByYear W25238584732018 @default.
• W2523858473 countsByYear W25238584732019 @default.
• W2523858473 countsByYear W25238584732020 @default.
• W2523858473 countsByYear W25238584732021 @default.
• W2523858473 countsByYear W25238584732022 @default.
• W2523858473 countsByYear W25238584732023 @default.
• W2523858473 crossrefType "journal-article" @default.
• W2523858473 hasAuthorship W2523858473A5001090145 @default.
• W2523858473 hasAuthorship W2523858473A5010928331 @default.
• W2523858473 hasAuthorship W2523858473A5039750122 @default.
• W2523858473 hasAuthorship W2523858473A5054081459 @default.
• W2523858473 hasAuthorship W2523858473A5060064406 @default.
• W2523858473 hasAuthorship W2523858473A5077044332 @default.
• W2523858473 hasAuthorship W2523858473A5082898906 @default.
• W2523858473 hasAuthorship W2523858473A5087108685 @default.
• W2523858473 hasAuthorship W2523858473A5087670483 @default.
• W2523858473 hasAuthorship W2523858473A5089426898 @default.
• W2523858473 hasConcept C127413603 @default.
• W2523858473 hasConcept C140676511 @default.
• W2523858473 hasConcept C171250308 @default.
• W2523858473 hasConcept C19067145 @default.
• W2523858473 hasConcept C191897082 @default.
• W2523858473 hasConcept C192562407 @default.
• W2523858473 hasConcept C2777855556 @default.
• W2523858473 hasConcept C2779680806 @default.
• W2523858473 hasConcept C2780824857 @default.
• W2523858473 hasConcept C42360764 @default.
• W2523858473 hasConcept C49040817 @default.
• W2523858473 hasConcept C549387045 @default.
• W2523858473 hasConcept C553756173 @default.
• W2523858473 hasConceptScore W2523858473C127413603 @default.
• W2523858473 hasConceptScore W2523858473C140676511 @default.
• W2523858473 hasConceptScore W2523858473C171250308 @default.
• W2523858473 hasConceptScore W2523858473C19067145 @default.
• W2523858473 hasConceptScore W2523858473C191897082 @default.
• W2523858473 hasConceptScore W2523858473C192562407 @default.
• W2523858473 hasConceptScore W2523858473C2777855556 @default.
• W2523858473 hasConceptScore W2523858473C2779680806 @default.
• W2523858473 hasConceptScore W2523858473C2780824857 @default.
• W2523858473 hasConceptScore W2523858473C42360764 @default.
• W2523858473 hasConceptScore W2523858473C49040817 @default.
• W2523858473 hasConceptScore W2523858473C549387045 @default.
• W2523858473 hasConceptScore W2523858473C553756173 @default.
• W2523858473 hasFunder F4320313619 @default.
• W2523858473 hasFunder F4320321001 @default.
• W2523858473 hasFunder F4320321524 @default.
• W2523858473 hasFunder F4320322795 @default.

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