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- W2524951969 abstract "本文采用正电子湮没谱研究质子辐照诱生缺陷, 实验发现: 能量为5 MeV的质子辐照在GaN厚膜中主要产生的是Ga单空位, 没有双空位或者空位团形成; 在10 K测试的低温光致发光谱中, 带边峰出现了蓝移, 辐照后黄光带的发光强度减弱, 说明黄光带的起源与Ga空位(VGa)之间不存在必然的联系, 各激子发光峰位置没有改变, 仅强度随质子注量发生变化; 样品(0002)面双晶XRD扫描曲线的半峰宽在辐照后明显增大, 说明质子辐照对晶格的周期性产生了影响, 薄膜晶体质量下降." @default.
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- W2524951969 date "2013-01-01" @default.
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- W2524951969 title "Study on proton irradiation induced defects in GaN thick film" @default.
- W2524951969 doi "https://doi.org/10.7498/aps.62.117103" @default.
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