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• W2525101982 abstract "We demonstrate a technique for selective GeO x -scavenging which creates a GeO x -free IL on Si 1−x Ge x substrates. This process reduces N it by >60% to 2e11 and increases high-field mobility at N inv =1e13 cm−2 by ∼1.3× in Si 0.6 Ge 0.4 pFETs with sub-nm EOT." @default.
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• W2525101982 date "2016-06-01" @default.
• W2525101982 modified "2023-09-26" @default.
• W2525101982 title "Selective GeO<inf>x</inf>-scavenging from interfacial layer on Si<inf>1−x</inf>Ge<inf>x</inf> channel for high mobility Si/Si<inf>1−x</inf>Ge<inf>x</inf> CMOS application" @default.
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• W2525101982 doi "https://doi.org/10.1109/vlsit.2016.7573369" @default.
• W2525101982 hasPublicationYear "2016" @default.
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