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- W2525194975 abstract "Q information devices have been well studied because they are expected to have functionalities beyond existing information devices. A single electron spin in Si quantum dots (QDs) is one of the most promising candidates for implementing a quantum bit (qubit) as a unit of information in quantum computers. Long coherence time of electron spins is expected in Si QDs, because hyperfine coupling between electron spins and nuclear spins is small in Si. We develop a novel device structure of lithographically-defined Si QDs toward qubits. The Si QDs are fabricated using electron beam lithography, reactive ion etching, and oxidation, in a metal-oxide-semiconductor (MOS) structure on silicon-oninsulator (SOI) substrates. The advantage of our device is that well-defined confinement potential and small QDs (~20 nm in diameter) can be obtained. We studied both single QD and double QD devices. Charge detection of change in number of electron in QDs, one by one, has been successfully demonstrated in both devices. Few-electron regimes in QDs are also realized in both devices. Using the double QD devices, we succeed in observing spin-related tunneling phenomena. These achievements are the important steps for realizing qubits. Tetsuo Kodera, J Nanomed Nanotechnol 2013, 4:6 http://dx.doi.org/10.4172/2157-7439.S1.013" @default.
- W2525194975 created "2016-10-07" @default.
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- W2525194975 date "2014-01-04" @default.
- W2525194975 modified "2023-09-26" @default.
- W2525194975 title "Silicon spin-based quantum information devices" @default.
- W2525194975 hasPublicationYear "2014" @default.
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