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- W2525698774 abstract "Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation." @default.
- W2525698774 created "2016-10-07" @default.
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- W2525698774 date "2016-09-26" @default.
- W2525698774 modified "2023-10-16" @default.
- W2525698774 title "I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs" @default.
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- W2525698774 doi "https://doi.org/10.1063/1.4963156" @default.
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