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- W2526314829 abstract "This paper aims to propose a new structure of vertical double-gate NMOS device with titanium silicide (TiSi x ) and hafnium dioxide (HfO 2 ) are utilized as gates and an insulator correspondingly. The simulation and characterization of the proposed device were carried out by using ATHENA and ATLAS modules of Silvaco TCAD tools. The threshold voltage (V TH ) of the device was then optimized by tuning the correct level of halo implant dose, halo implant tilt, S/D implant energy and S/D implant tilt via the L 9 orthogonal array (OA) of Taguchi method. The vertical TiSi x /HfO 2 channel vertical double-gate NMOS device has shown excellent device characteristics as the V TH , drive current (I ON ), leakage current (I OFF ), I ON /I OFF ratio and subthreshold swing (SS) were observed to be 0.2101 V, 2235.3 µA/µm, 1.363E–15 A/µm, 1.64E12 and 58.76 mV/dec respectively. These results are within the expected requirement of high performance (HP) multi gate (MG) technology as predicted by International Technology Roadmap Semiconductor (ITRS) 2013." @default.
- W2526314829 created "2016-10-07" @default.
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- W2526314829 date "2016-08-01" @default.
- W2526314829 modified "2023-09-25" @default.
- W2526314829 title "Design and optimization of TiSi<inf>x</inf>/HfO<inf>2</inf> channel vertical double gate NMOS device" @default.
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- W2526314829 doi "https://doi.org/10.1109/smelec.2016.7573593" @default.
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