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- W2527194852 abstract "The effects of surface treatment by a dilute HF rinse on the drain current -gate voltage characteristics in HgFETs have been investigated by experimental measurements and numerical simulations. The apparent threshold voltage increases and interface trap density decreases with time after the HF rinse is due to a coupling between the Si film/BOX interface and the positively charged, hydrogen-terminated surface acting as a back gate in the thin-film fully depleted HgFET." @default.
- W2527194852 created "2016-10-07" @default.
- W2527194852 date "2005-01-01" @default.
- W2527194852 modified "2023-10-18" @default.
- W2527194852 title "Mercury Pseudo-MOSFET (HgFET) Drain Current Dependence on Surface Treatment" @default.
- W2527194852 doi "https://doi.org/10.1149/ma2005-01/12/567" @default.
- W2527194852 hasPublicationYear "2005" @default.
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