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- W2527439298 abstract "High quality germanium (Ge), III–V (GaAs, GaN) on insulator substrates (“X”-OI, X = Ge, GaAs or GaN) are demonstrated on 200 mm Si wafer. The Ge or III–V epitaxial films are grown directly on the Si donor wafers using a metal-organic chemical vapour deposition (MOCVD). The epilayers are then bonded and transferred to another Si (001) handle wafers to form various “X”-OI substrates. The quality of the epitaxial films (in term of threading dislocations density, TDD) on the X-OI can be further improved through a thermal treatment to mid-106 /cm2." @default.
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- W2527439298 date "2016-06-01" @default.
- W2527439298 modified "2023-09-24" @default.
- W2527439298 title "High quality Ge-OI, III–V-OI on 200 mm Si substrate" @default.
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- W2527439298 doi "https://doi.org/10.1109/snw.2016.7578032" @default.
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