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• W2528224264 abstract "A high-K/metal gate (HKMG)-stack (TiN/Al-doped-HfO x /SiO2/Si)-based bipolar resistive random access memory (RRAM) cell is proposed and fabricated by 28/20-nm HKMG CMOS compatible technology. Robust reliability behaviors (retention at $200~ {^{circ }}text {C} > 4 times 10^{4}$ s and endurance $> 10^{{{5^{vphantom {frac {}{,}}}}}}$ cycles) and ultralow switching current ( $ for RESET and $ for SET) are both demonstrated. The sub- $mu text{A}$ switching current and self-selection nonlinear $I$ – $V$ characteristics are attributed to the SiO2 interfacial layer rather than the decrease of conductive filament size and oxygen vacancy ( $V_{O}$ ) density, which can be verified by HRTEM and measured conduction behavior. Therefore, robust reliability property is also achieved. The demonstrated excellent memory characteristics of HKMG stacked RRAM cell enable constituting 1-Mb workable crosspoint array even though the feature size scales down to 10 nm according to the HSPICE simulation." @default.
• W2528224264 created "2016-10-14" @default.
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• W2528224264 date "2016-11-01" @default.
• W2528224264 modified "2023-10-18" @default.
• W2528224264 title "Self-Selection RRAM Cell With Sub- $mu text{A}$ Switching Current and Robust Reliability Fabricated by High- $K$ /Metal Gate CMOS Compatible Technology" @default.
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• W2528224264 doi "https://doi.org/10.1109/ted.2016.2612824" @default.
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