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- W2529943144 abstract "For Cu(In,Ga)Se2 [CIGS] solar cells, currently, the practical bandgap for the maximal conversion efficiency is approximately 1.15 eV which is still below Shockley optimal bandgap, 1.4 eV [1,2] . In order to investigate a possible cause of this circumstance, in this study, the non-radiative recombination process, by which the photocarriers are directly lost, was examined by photothermal AFM (PT-AFM) on CIGS solar cells with various Ga contents. For the PT-AFM measurements, a commercial AFM (SPI4000/ SPA300HV, Hitachi High-Tech Science Corp., Japan) with the DS method [3] was operated at room temperature in nitrogen gas at 1 atm, and an Si piezoresistive cantilever with a spring constant of 40 N/m was used. In addition, two light sources with different photon energies were utilized, so that the aboveor below-gap excitation can be realized. Their typical light intensity was approximately 100 mW/cm 2 . Under the light illumination modulated at a frequency of 180 Hz with a 50%-duty-ratio, both topographic and PT-signal images were acquired simultaneously. Figure 1 shows the acquired images on our four samples under the above-gap excitation condition. On the sample with the lowest Ga content (23%), PT-signals were enhanced especially around the grain boundaries. These enhanced PT-signals are attributable to the electron accumulation owing to a downward band bending around the grain boundaries [4] . On other samples with higher Ga contents, to the contrary, the areas which exhibit the strong PT signal broadened towards the grain interiors mostly along the boundaries of the sub-grains. Although its reason is still unclear, the results imply that, on the samples with the higher Ga contents, the non-radiative recombination centers spread further, which should degrade the solar cell performance. In fact, the samples with the lowest and highest Ga contents exhibited the highest and lowest conversion efficiencies, respectively, among all our samples. In addition to these results, the PT images taken under the below-gap excitation conditions will enable us to investigate the energy levels of the non-radiative recombination centers. This work was partly supported by JSPS and MEXT, Japan." @default.
- W2529943144 created "2016-10-21" @default.
- W2529943144 creator A5049657925 @default.
- W2529943144 date "2014-02-06" @default.
- W2529943144 modified "2023-10-03" @default.
- W2529943144 title "Non-radiative Recombination in CIGS Solar Cells with Different Gallium Contents Investigated through PT-AFM" @default.
- W2529943144 hasPublicationYear "2014" @default.
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