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• W2532123035 abstract "This paper reports a full CMOS process using a combination of a TiN/W Metal Replacement Gate Transistor design with a high dielectric constant gate insulator of tantalum pentoxide over thin remote plasma nitrided gate oxide. MOS devices with high gate capacitances equivalent to that for <2 nm SiO/sub 2/ but having relatively low gate leakage are reported. Transistors with gate lengths near or below 0.1 /spl mu/m have good characteristics. Working CMOS circuits using Ta/sub 2/O/sub 5/ gate insulator are demonstrated for the first time." @default.
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• W2532123035 date "2002-11-27" @default.
• W2532123035 modified "2023-10-17" @default.
• W2532123035 title "CMOS metal replacement gate transistors using tantalum pentoxide gate insulator" @default.
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• W2532123035 doi "https://doi.org/10.1109/iedm.1998.746471" @default.
• W2532123035 hasPublicationYear "2002" @default.
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